NXP Semiconductors TDA8932B Uživatelský manuál stáhnout pdf (Strana 21)

Product data sheet Rev. 03— 21 June 2007 21 of 48

NXP Semiconductors

TDA8932B

Class-D audio ampliﬁer

[1] R

is the series resistance of inductor and capacitor of low-pass LC ﬁlter in the application.

[2] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.

[3] Maximum V

ripple

= 2 V (p-p); R

=0Ω.

[4] B = 20 Hz to 20 kHz, AES17 brick wall.

[5] Output power is measured indirectly; based on R

DSon

measurement.

Two layer application board (55 mm × 45 mm), 35 µm copper, FR4 base material in free air with natural convection.

n(o)

noise output voltage R

=0Ω

Operating mode

[4]

- 100 150 µV

Mute mode

[4]

- 70 100 µV

O(mute)

mute output voltage Mute mode; V

= 1 V (RMS) and

= 1 kHz

- 100 - µV

CMRR common mode rejection ratio V

i(cm)

= 1 V (RMS) - 75 - dB

output power efﬁciency P

= 15 W; V

= 12 V and R

=4Ω 88 90 - %

= 30 W; V

= 22 V and R

=8Ω 90 92 - %

o(RMS)

RMS output power continuous time output power

[5]

=4Ω; V

=12V

THD+N = 0.5 %; f

= 1 kHz 11.8 13.2 - W

THD+N = 0.5 %; f

= 100 Hz - 13.2 - W

THD+N = 10 %; f

= 1 kHz 15.5 17.2 - W

THD+N = 10 %; f

= 100 Hz - 17.2 - W

=8Ω; V

=22V

THD+N = 0.5 %; f

= 1 kHz 23.1 25.7 - W

THD+N = 0.5 %; f

= 100 Hz - 25.7 - W

THD+N = 10 %; f

= 1 kHz 28.9 32.1 - W

THD+N = 10 %; f

= 100 Hz - 32.1 - W

short time output power

[5]

=4Ω; V

=15V

THD+N = 0.5 % 18.5 20.6 - W

THD+N = 10 % 23.9 26.6 - W

=8Ω; V

=29V

THD+N = 0.5 % 36.0 40.0 - W

THD+N = 10 % 49.5 55.0 - W

Table 13. BTL characteristics (Continued)

= 22 V; R

Ω

; f

= 1 kHz; f

osc

= 320 kHz; R

< 0.1

Ω

[1]

; T

amb

=25

C; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

1 2 ... 16 17 18 19 20 21 22 23 24 25 26 ... 47 48

TDA8932B 1

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