TDA8932B_3 © NXP B.V. 21 June 2007. All rights reserved.
Product data sheet Rev. 03— 21 June 2007 20 of 48
NXP Semiconductors
TDA8932B
Class-D audio amplifier
[1] R
s
is the series resistance of inductor and capacitor of low-pass LC filter in the application.
[2] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
[3] Maximum V
ripple
= 2 V (p-p); R
s
=0Ω.
[4] B = 20 Hz to 20 kHz, AES17 brick wall.
[5] Output power is measured indirectly; based on R
DSon
measurement.
Two layer application board (55 mm × 45 mm), 35 µm copper, FR4 base material in free air with natural convection.
CMRR common mode rejection ratio V
i(cm)
= 1 V (RMS) - 75 - dB
η
po
output power efficiency P
o
=15W
V
P
=22V; R
L
=4Ω 90 92 - %
V
P
=30V; R
L
=8Ω 91 93 - %
P
o(RMS)
RMS output power continuous time output power per
channel
[5]
R
L
=4Ω; V
P
=22V
THD+N = 0.5 %; f
i
= 1 kHz 10.9 12.1 - W
THD+N = 0.5 %; f
i
= 100 Hz - 12.1 - W
THD+N = 10 %; f
i
= 1 kHz 13.8 15.3 - W
THD+N = 10 %; f
i
= 100 Hz - 15.3 - W
R
L
=8Ω; V
P
=30V
THD+N = 0.5 %; f
i
= 1 kHz 11.1 12.3 - W
THD+N = 0.5 %; f
i
= 100 Hz - 12.3 - W
THD+N = 10 %; f
i
= 1 kHz 14.0 15.5 - W
THD+N = 10 %; f
i
= 100 Hz - 15.5 - W
short time output power per channel
[5]
R
L
=4Ω; V
P
=29V
THD+N = 0.5 % 19.0 21.1 - W
THD+N = 10 % 23.8 26.5 - W
Table 12. SE characteristics (Continued)
V
P
= 22 V; R
L
=2
×
4
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω
[1]
; T
amb
=25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 13. BTL characteristics
V
P
= 22 V; R
L
=8
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω
[1]
; T
amb
=25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
THD+N total harmonic
distortion-plus-noise
P
o
=1W
[2]
f
i
= 1 kHz - 0.007 0.1 %
f
i
= 6 kHz - 0.05 0.1 %
G
v(cl)
closed-loop voltage gain 35 36 37 dB
SVRR supply voltage ripple rejection Operating mode
[3]
f
i
= 100 Hz - 75 - dB
f
i
= 1000 Hz 70 75 - dB
sleep; f
i
= 100 Hz
[3]
-80-dB
|Z
i
| input impedance differential 35 50 kΩ
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