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Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT

protected power switch in

TOPFET2 technology assembled in I

Nominal load current (ISO) 9 A

a 5 pin plastic surface mount

package.

SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

Continuous off-state supply voltage 50 V

General controller for driving I

Continuous load current 20 A

lamps, motors, solenoids, heaters. T

Continuous junction temperature 150 ˚C

On-state resistance T

= 25˚C 38 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS

Low on-state resistance

CMOS logic compatible

Very low quiescent current

Overtemperature protection

Load current limiting

Latched overload and

short circuit protection

Overvoltage and undervoltage

shutdown with hysteresis

On-state open circuit load

detection

Diagnostic status indication

Voltage clamping for turn off

of inductive loads

ESD protection on all pins

Reverse battery, overvoltage

and transient protection

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Ground

2 Input

3 (connected to mb)

4 Status

5 Load

Fig. 2. Fig. 3.

mb Battery

BATT

LOAD

INPUT

GROUND

STATUS

POWER

MOSFET

CONTROL &

PROTECTION

CIRCUITS

12 45

HSS

TOPFET

September 2001 1 Rev 1.000

1 2 3 4 5 6 ... 12 13

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Strany 1 - APPLICATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R DESCRIPTION QUICK REFERENCE DATAMonolithic single channel high side SYM

Strany 2 - THERMAL CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.22. Typical battery to ground clamping voltage.VBG = f(Tj); para

Strany 3 - STATIC CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.28. Short circuit load threshold voltage.VBL(TO) = f(VBG); condi

Strany 4 - STATUS CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R MECHANICAL DATAFig.34. SOT426 surface mounting package1, centre pin c

Strany 5 - KEY TO ABBREVIATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R DEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS1STATU

Strany 6 - CAPACITANCES

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R LIMITING VALUESLimiting values in accordance with the Absolute Maximum

Strany 7

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R STATIC CHARACTERISTICSLimits are at -40˚C ≤ Tmb ≤ 150˚C and typicals a

Strany 8 - C

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R INPUT CHARACTERISTICS9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 15

Strany 9

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICSLimits are at -40˚C ≤ Tm

Strany 10 - -50 0 50 100 150 200

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R OVERLOAD PROTECTION CHARACTERISTICS5.5 V ≤ VBG ≤ 35 V, limits are at -

Strany 11 - Zth j-mb ( K / W )

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.4. High side switch measurements schematic.(current and voltage

Strany 12 - MECHANICAL DATA

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.10. Typical supply quiescent current.IB = f(Tj); condition VBG =

Strany 13 - LIFE SUPPORT APPLICATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.16. Typical status low characteristic.VSG = f(Tj); conditions VB

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